Semiconductor apparatus

ABSTRACT

A semiconductor apparatus includes a control circuit and a level shifter. The control circuit is configured to output a power control signal for activating a data input/output circuit operated by a first voltage when the first voltage is higher than a first set voltage and a second voltage is higher a second set voltage. The level shifter configured to receive the power control signal and lower operating voltages of devices including a plurality of transistors with a thin gate insulating layer based on the power control signal.

CROSS-REFERENCES TO RELATED APPLICATION

The present application is a continuation application of U.S. patentapplication Ser. No. 16/827,584 filed on Mar. 23, 2020, which is acontinuation-in-part application of U.S. application Ser. No.16/227,975, filed on Dec. 20, 2018, and U.S. application Ser. No.16/656,217, filed on Oct. 17, 2019 and claims priority under 35 U.S.C119(a) to Korean Application No. 10-2018-0063012 and 10-2018-0162871,filed on May 31, 2018 and Dec. 17, 2018 respectively, which isincorporated herein by reference in its entirety.

BACKGROUND 1. Technical Field

Various embodiments generally relate to a semiconductor integratedcircuit, and more particularly, to a semiconductor apparatus.

2. Related Art

A semiconductor apparatus is developed to transmit/receive a largeramount of data at high speed.

In order to normally transmit/receive a larger amount of data at highspeed, the semiconductor apparatus is designed in such a manner that avoltage used therein is divided into a voltage used by circuits thattransmit/receive data and a voltage used by circuits that do nottransmit/receive data.

The semiconductor apparatus is designed to operate based on voltagesreceived from a plurality of voltage sources, and developed to reducepower consumption used therein.

SUMMARY

In an embodiment, a semiconductor apparatus comprises a control circuitconfigured to output a power control signal for activating a datainput/output circuit operated by a first voltage when the first voltageis higher than a first set voltage and a second voltage is higher asecond set voltage; and a level shifter configured to receive the powercontrol signal and lower operating voltages of devices including aplurality of transistors with a thin gate insulating layer based on thepower control signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram illustrating a semiconductor apparatusin accordance with an embodiment.

FIG. 2 is a configuration diagram illustrating a control circuit of FIG.1.

FIG. 3 is a configuration diagram illustrating a first voltage detectioncircuit of FIG. 2.

FIG. 4 is a configuration diagram illustrating a second voltagedetection circuit of FIG. 2.

FIG. 5 is a configuration diagram illustrating a storage and outputcircuit of FIG. 2.

FIG. 6 is a timing diagram for describing an operation of the controlcircuit of FIG. 2.

FIG. 7 is a configuration diagram illustrating a control circuit inaccordance with another embodiment of FIG. 1.

FIG. 8 is a configuration diagram illustrating a second voltagedetection circuit of FIG. 7.

FIG. 9 is a configuration diagram illustrating a storage and outputcircuit of FIG. 7.

FIG. 10 is a timing diagram for describing an operation of the controlcircuit of FIG. 7.

FIG. 11 is a diagram illustrating a configuration of a level shifteraccording to an embodiment of the present disclosure.

FIG. 12 is a diagram illustrating a configuration of a driver circuitaccording to an embodiment of the present disclosure.

FIG. 13 is a block diagram illustrating a semiconductor apparatus inaccordance with an embodiment.

FIG. 14 is a circuit diagram illustrating a configuration of a levelshifter of FIG. 13 in accordance with an embodiment.

FIG. 15 is a diagram illustrating output timings of respective nodes ofthe level shifter of FIG. 14 according to an AC simulation.

FIG. 16 is a circuit diagram illustrating a configuration of the levelshifter of FIG. 13 in accordance with an embodiment.

FIG. 17 is a diagram illustrating a configuration of a driver circuitaccording to an embodiment of the present disclosure.

DETAILED DESCRIPTION

Hereinafter, a semiconductor apparatus according to the presentdisclosure will be described below with reference to the accompanyingdrawings through exemplary embodiments.

Various embodiments are directed to a semiconductor apparatus capable ofreducing power consumption.

As illustrated in FIG. 1, a semiconductor apparatus 1000 in accordancewith an embodiment may include a plurality of control circuits 100, aplurality of data input/output circuits 200 and a core circuit 300.

Each of the control circuits 100 may detect a first voltage used in thecore circuit 300 and a second voltage used in the data input/outputcircuits 200. Each of the control circuits 100 may activate ordeactivate the data input/output circuits 200. For example, when both ofthe first and second voltages become equal to or higher than a setvoltage level, each of the control circuits 100 may activate theplurality of data input/output circuits 200. On the other hand, when anyone of the first and second voltages becomes lower than the set voltagelevel, each of the control circuits 100 may deactivate the plurality ofdata input/output circuits 200.

The plurality of data input/output circuits 200 may be activated totransmit data outputted from the core circuit 300 or receive data to beinputted to the core circuit 300. On the other hand, the plurality ofdata input/output circuits 200 may be deactivated to convert the stateof an output node into a high impedance state.

The core circuit 300 may be configured to store data transferred fromthe plurality of data input/output circuits 200 or transfer data storedtherein to the plurality of data input/output circuits 200.

FIG. 2 is a configuration diagram illustrating one control circuit 100among the plurality of control circuits 100 illustrated in FIG. 1.

As illustrated in FIG. 2, the control circuit 100 may include a firstvoltage detection circuit 110, a second voltage detection circuit 120and a storage and output circuit 130.

The first voltage detection circuit 110 may generate a first voltagedetection signal D_s1 in response to the voltage level of a firstvoltage VCCQ. For example, when the voltage level of the first voltageVCCQ becomes equal to or higher than a first set voltage level, thefirst voltage detection circuit 110 may enable the first voltagedetection signal D_s1 at a high level. On the other hand, when thevoltage level of the first voltage VCCQ is lower than the first setvoltage level, the first voltage detection circuit 110 may disable thefirst voltage detection signal D_s1 at a low level.

The second voltage detection circuit 120 may generate a second voltagedetection signal D_s2 in response to the first voltage detection signalD_s1, a current control signal I_c and a second voltage VDD. Forexample, when the first voltage detection signal D_s1 is enabled and thevoltage level of the second voltage VDD becomes equal to or higher thana second set voltage level, the second voltage detection circuit 120 mayenable the second voltage detection signal D_s2 at a high level. On theother hand, when the first voltage detection signal D_s1 is disabled,the second voltage detection circuit 120 may disable the second voltagedetection signal D_s2 at a low level. When the current control signalI_c is enabled at a high level, the second voltage detection circuit 120may disable the second voltage detection signal D_s2 at a low level.Furthermore, when the current control signal I_c is enabled at a highlevel, the second voltage detection circuit 120 can reduce power orcurrent consumption thereof.

The storage and output circuit 130 may generate a power control signalIO_pc in response to the second voltage detection signal D_s2. Forexample, when the second voltage detection signal D_s2 is enabled, thestorage and output circuit 130 may enable the current control signalI_c, latch the enabled second voltage detection signal D_s2, and outputthe latched signal as the power control signal IO_pc. On the other hand,when the second voltage detection signal D_s2 is disabled, the storageand output circuit 130 may disable the current control signal I_c anddisable the power control signal IO_pc at a low level.

At this time, the first voltage VCCQ may be supplied to the plurality ofdata input/output circuits 200 of FIG. 1, and the second voltage VDD maybe supplied to the core circuit 300 of FIG. 1. The power control signalIO_pc may be inputted to the plurality of data input/output circuits200. The plurality of data input/output circuits 200 may be activatedwhen the power control signal IO_pc is enabled, and deactivated when thepower control signal IO_pc is disabled.

FIG. 3 is a configuration diagram illustrating the first voltagedetection circuit 110 of FIG. 2.

As illustrated in FIG. 3, the first voltage detection circuit 110 mayinclude a first transistor P1, a first capacitor C1, and a secondcapacitor C2. The first voltage detection circuit 110 may also beconfigured to perform a first inversion operation and a second inversionoperation. For example, the first voltage detection circuit 110 mayinclude a first inverter IV1, a second inverter IV2.

The first transistor P1 may have a source configured to receive thefirst voltage VCCQ and a drain and gate coupled to a first node N_A incommon.

The first capacitor C1 may have one terminal coupled to the first nodeN_A and the other terminal coupled to a ground terminal VSS.

The first inverter IV1 may have an input terminal coupled to the firstnode N_A.

The second inverter IV2 may have an input terminal coupled to an outputterminal of the first inverter IV1 and an output terminal configured tooutput the first voltage detection signal D_s1.

The second capacitor C2 may have one terminal coupled to the outputterminal of the second inverter IV2 and the other terminal coupled tothe ground terminal VSS.

FIG. 4 is a configuration diagram illustrating the second voltagedetection circuit 120 of FIG. 2.

As illustrated in FIG. 4, the second voltage detection circuit 120 mayinclude a first current source circuit 121, a first current sink circuit122, a second current source circuit 123, a third current source circuit124, and a third capacitor C3. The second voltage detection circuit 120may also be configured to perform a third inversion operation. Forexample, second voltage detection circuit 120 may include a thirdinverter IV3.

The first current source circuit 121 may supply a current to the secondnode N_B in response to the current control signal I_c. For example,when the current control signal I_c is disabled at a low level, thefirst current source circuit 121 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B. On theother hand, when the current control signal I_c is enabled at a highlevel, the first current source circuit 121 may stop supplying thecurrent to the second node N_B.

The first current source circuit 121 may include a third capacitor C3, asecond transistor P2 and a resistor R.

The third capacitor C3 may have one terminal coupled to a gate of thesecond transistor P2 and the other terminal coupled to the groundterminal VSS.

The second transistor P2 may have the gate configured to receive thecurrent control signal I_c, a source configured to receive the firstvoltage VCCQ, and a drain coupled to one terminal of the resistor R.

The resistor R may have the one terminal coupled to the drain of thesecond transistor P2 and the other terminal coupled to the second nodeN_B.

When the first voltage detection signal D_s1 is enabled and the voltagelevel of the second voltage VDD becomes equal to or higher than thesecond set voltage level, the first current sink circuit 122 may lowerthe voltage level of the second node N_B by passing the current of thesecond node N_B to the ground terminal VSS.

The first current sink circuit 122 may include third and fourthtransistors N1 and N2.

The third transistor N1 may have a gate configured to receive the firstvoltage detection signal D_s1 and a drain coupled to the second nodeN_B.

The fourth transistor N2 may have a gate configured to receive thesecond voltage VDD, a drain coupled to the source of the thirdtransistor N1, and a source coupled to the ground terminal VSS.

When the first voltage detection signal D_s1 is disabled, the secondcurrent source circuit 123 may raise the voltage level of the secondnode N_B by supplying a current to the second node N_B.

The second current source circuit 123 may include a fifth transistor P3.

The fifth transistor P3 may have a gate configured to receive the firstvoltage detection signal D_s1, a source configured to receive the firstvoltage VCCQ, and a drain coupled to the second node N_B.

When the current control signal I_c is enabled, the third current sourcecircuit 124 may lower the voltage level of the second node N_B bypassing the current of the second node N_B to the ground terminal VSS.

The third current source circuit 124 may include a sixth transistor N3.

The sixth transistor N3 may have a gate configured to receive thecurrent control signal I_c, a drain coupled to the second node N_B, anda source configured to receive the first voltage VCCQ.

The fourth capacitor C4 may have one terminal configured to receive thefirst voltage VCCQ and the other terminal coupled to the second nodeN_B.

The third inverter IV3 may invert the voltage level of the second nodeN_B and output the inverted voltage level as the second voltagedetection signal D_s2. The third inverter IV3 may have an input terminalcoupled to the second node N_B and an output terminal configured tooutput the second voltage detection signal D_s2. Therefore, the secondnode N_B may serve as an input node of the third inverter IV3.

FIG. 5 is a configuration diagram illustrating the storage and outputcircuit 130 of FIG. 2.

As illustrated in FIG. 5, the storage and output circuit 130 may includea control signal generation circuit 131, a switch 132, a latch circuit133, a fifth capacitor C5 and a power control signal output circuit 134.

The control signal generation circuit 131 may enable a switch controlsignal SW_c and the current control signal I_c when the second voltagedetection signal D_s2 is enabled. For example, when the second voltagedetection signal D_s2 is enabled, the control signal generation circuit131 may enable the switch control signal SW_c for a preset time.Furthermore, the control signal generation circuit 131 may enable thecurrent control signal I_c when the second voltage detection signal D_s2is enabled, and disable the current control signal I_c when the secondvoltage detection signal D_s2 is disabled. When enabled by the secondvoltage detection signal D_s2, the switch control signal SW_c may bedisabled after retaining the enabled state for the preset time.

The word “preset” as used herein with respect to a parameter, such as apreset time, means that a value for the parameter is determined prior tothe parameter being used in a process or algorithm. For someembodiments, the value for the parameter is determined before theprocess or algorithm begins. In other embodiments, the value for theparameter is determined during the process or algorithm but before theparameter is used in the process or algorithm.

The control signal generation circuit 131 may include a Schmitt triggercircuit 131-1, a first delay circuit 131-2, and a second delay circuit131-2. The control signal generation circuit 131 may also be configuredto perform an AND operation. For example, control signal generationcircuit 131 may include an AND gate AND.

The Schmitt trigger circuit 131-1 may generate a high-level outputsignal when the voltage level of the second voltage detection signalD_s2 becomes higher than a preset voltage level or the second voltagedetection signal D_s2 is enabled at a high level. On the other hand, theSchmitt trigger circuit 131-1 may generate a low-level output signalwhen the voltage level of the second voltage detection signal D_s2becomes lower than the preset voltage level or the second voltagedetection signal D_s2 is disabled at a low level.

The first delay circuit 131-2 may delay and invert the output signal ofthe Schmitt trigger circuit 131-1, and output the delayed and invertedsignal.

The second delay circuit 131-3 may delay and invert the output signal ofthe first delay circuit 131-2, and output the delayed and invertedsignal as the current control signal I_c.

The AND gate AND may receive the output signals of the Schmitt triggercircuit 131-1 and the first delay circuit 131-2, and generate the switchcontrol signal SW_c. For example, the AND gate AND may generate theswitch control signal SW_c which is enabled at a high level only duringa period in which both of the output signals of the Schmitt triggercircuit 131-1 and the first delay circuit 131-2 are at a high level. Atthis time, the enable period of the switch control signal SW_c may beequal to the delay time of the first delay circuit 131-2.

When the switch control signal SW_c is enabled, the switch 132 mayoutput the second voltage detection signal D_s2 as a latch inversionsignal L_sb. On the other hand, when the switch control signal SW_c isdisabled, the switch 132 may stop the operation of outputting the secondvoltage detection signal D_s2 as the latch inversion signal L_sb.

The latch circuit 133 may latch and invert the latch inversion signalL_sb, and output the latched and inverted signal as a latch signal L_s.

The latch circuit 133 may be configured to perform a fourth and fifthinversion operation. For example, the latch circuit 133 may includefourth and fifth inverters IV4 and IV5.

The fourth inverter IV4 may receive the latch inversion signal L_sb,invert the received signal, and output the inverted signal as the latchsignal L_s.

The fifth inverter IV5 may receive the output signal of the fourthinverter IV4, invert the received signal, and output the inverted signalas an input signal of the fourth inverter IV4.

At this time, the fifth capacitor C5 may be coupled to a node to whichthe switch 132 and the latch circuit 133 are coupled. The fifthcapacitor C5 may have one terminal coupled to the node to which theswitch 132 and the latch circuit 133 are coupled and the other terminalcoupled to the ground terminal VSS. The switch 132 may transfer thesecond voltage detection signal D_s2 to the latch circuit 133 when theswitch control signal SW_c is enabled, and electrically separate thesecond voltage detection signal D_s2 from the latch circuit 133 when theswitch control signal SW_c is disabled.

The power control signal output circuit 134 may be configured to performa sixth inversion operation. For example, the power control signaloutput circuit 134 may include seventh to 11th transistors N4, N5 and P4to P6, a sixth inverter IV6 and a sixth capacitor C6.

The seventh transistor N4 may have a gate configured to receive thelatch signal L_s and a source coupled to the ground terminal VSS.

The eighth transistor N5 may have a gate configured to receive the latchinversion signal L_sb and a source coupled to the ground terminal VSS.

The ninth transistor P4 may have a gate coupled to the drain of theeighth transistor N5, a source configured to receive the first voltageVCCQ, and a drain coupled to the drain of the seventh transistor N4.

The tenth transistor P5 may have a gate coupled to the drain of theseventh transistor N4, a source configured to receive the first voltageVCCQ, and a drain coupled to the drain of the eighth transistor N5.

The 11th transistor P6 may have a gate configured to receive the secondvoltage detection signal D_s2, a source configured to receive the firstvoltage VCCQ, and a drain coupled to a node to which the eighth andtenth transistors N5 and P5 are coupled in common.

The sixth inverter IV6 may have an input terminal coupled to a node towhich the eighth, tenth and 11th transistors N5, P5 and P6 are coupledin common, and an output terminal configured to output the power controlsignal IO_pc.

The sixth capacitor C6 may have one terminal coupled to the outputterminal of the sixth inverter IV6 and the other terminal coupled to theground terminal VSS.

Referring to FIGS. 2 to 6, the semiconductor apparatus having theabove-described configuration in accordance with the present embodimentwill be described as follows.

Referring to FIG. 3, the operation of the first voltage detectioncircuit 110 will be described.

When the voltage level of the first voltage VCCQ becomes higher than thefirst set voltage level, the first transistor P1 may be turned on toraise the voltage level of the first node N_A. The voltage level of thefirst node N_A may be outputted as the first voltage detection signalD_s1 through the first and second inverters IV1 and IV2.

Consequently, when the voltage level of the first voltage VCCQ becomeshigher than the first set voltage level, the first voltage detectioncircuit 110 may enable the first voltage detection signal D_s1 at a highlevel.

Referring to FIG. 4, the operation of the second voltage detectioncircuit 120 will be described.

When the current control signal I_c is disabled at a low level, thefirst current source circuit 121 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B.

When the first voltage detection signal D_s1 is enabled at a high leveland the voltage level of the second voltage VDD becomes higher than thesecond set voltage level, the first current sink circuit 122 may lowerthe voltage level of the second node N_B by passing the current of thesecond node N_B to the ground terminal VSS.

When the first voltage detection signal D_s1 is disabled at a low level,the second current source circuit 123 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B.

When the current control signal I_c is enabled at a high level, thethird current source circuit 124 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B.

The third inverter IV3 may invert the voltage level of the second nodeN_B and output the inverted voltage level as the second voltagedetection signal D_s2.

Consequently, when the first voltage detection signal D_s1 is enabled ata high level and the voltage level of the second voltage VDD becomeshigher than the second set voltage level, the second voltage detectioncircuit 120 may enable the second voltage detection signal D_s2 at ahigh level. On the other hand, when the first voltage detection signalD_s1 is disabled at a low level or the current control signal I_c isenabled at a high level, the second voltage detection circuit 120 maydisable the second voltage detection signal D_s2 at a low level.

Referring to FIG. 5, the operation of the storage and output circuit 130will be described.

The second voltage detection signal D_s2 may be delayed by the delaytimes of the first and second delay circuits 131-2 and 131-3, andoutputted as the current control signal I_c.

When the second voltage detection signal D_s2 is enabled, the switchcontrol signal SW_c having an enable period corresponding to the delaytime of the first delay circuit 131-2 may be generated.

During the enable period of the switch control signal SW_c, the secondvoltage detection signal D_s2 may be inputted to the latch circuit 133.

The latch circuit 133 may latch the second voltage detection signalD_s2, and output the latched signal as the latch signal L_s and thelatch inversion signal L_sb. At this time, the latch signal L_s and thelatch inversion signal L_sb may have levels opposite to each other.

When the latch signal L_s is enabled at a high level, the power controlsignal output circuit 134 may output the power control signal IO_pcwhich is disabled at a low level. On the other hand, when the latchsignal L_s is disabled at a low level, the power control signal outputcircuit 134 may output the power control signal IO_pc which is enabledat a high level. Furthermore, when the second voltage detection signalD_s2 is disabled at a low level, the power control signal output circuit134 may output the power control signal IO_pc which is disabled at a lowlevel.

Consequently, when the second voltage detection signal D_s2 is enabledat a high level, the storage and output circuit 130 may output thecurrent control signal I_c and the power control signal IO_pc which areenabled at a high level. When the second voltage detection signal D_s2is disabled at a low level, the storage and output circuit 130 mayoutput the current control signal I_c and the power control signal IO_pcwhich are disabled at a low level.

The control circuit 100 including the first voltage detection circuit110, the second voltage detection circuit 120 and the storage and outputcircuit 130, which operate as described above, may enable the powercontrol signal IO_pc at a high level, when the first voltage VCCQbecomes higher than the first set voltage level and the second voltageVDD becomes higher than the second set voltage level as illustrated in atiming diagram of FIG. 6. On the other hand, when the voltage level ofthe first voltage VCCQ becomes lower than the first set voltage level,the control circuit 100 may disable the power control signal IO_pc at alow level.

The data input/output circuits 200 of FIG. 1 may be activated only inthe enable period of the power control signal IO_pc, and input/outputdata.

FIG. 7 is a configuration diagram illustrating one control circuit 100among the plurality of control circuits 100 illustrated in FIG. 1,showing a different embodiment from the control circuit of FIG. 2.

As illustrated in FIG. 7, the control circuit 100 may include a firstvoltage detection circuit 110, a second voltage detection circuit 120and a storage and output circuit 130.

The first voltage detection circuit 110 may generate a first voltagedetection signal D_s1 in response to the voltage level of a firstvoltage VCCQ. For example, the first voltage detection circuit 110 mayenable the first voltage detection signal D_s1 at a high level when thevoltage level of the first voltage VCCQ becomes equal to or higher thana first set voltage level. On the other hand, when the voltage level ofthe first voltage VCCQ is lower than the first set voltage level, thefirst voltage detection circuit 110 may disable the first voltagedetection signal D_s1 at a low level.

The second voltage detection circuit 120 may generate the second voltagedetection signal D_s2 in response to the first voltage detection signalD_s1, the current control signal I_c and the first and second voltagesVCCQ and VDD. For example, when the first voltage detection signal D_s1is enabled and the voltage level of the second voltage VDD becomes equalto or higher than a second set voltage level, the second voltagedetection circuit 120 may enable the second voltage detection signalD_s2 at a high level. On the other hand, when the first voltagedetection signal D_s1 is disabled, the second voltage detection circuit120 may disable the second voltage detection signal D_s2 at a low level.When the second voltage VDD is equal to or lower than a preset voltagelevel, the second voltage detection circuit 120 may disable the secondvoltage detection signal D_s2 at a low level. Furthermore, when thecurrent control signal I_c is enabled at a high level, the secondvoltage detection circuit 120 can reduce power or current consumptionthereof.

The storage and output circuit 130 may generate the power control signalIO_pc in response to the second voltage detection signal D_s2 and thevoltage level of the second voltage VDD. For example, when the secondvoltage detection signal D_s2 is enabled and the voltage level of thesecond voltage VDD is higher than the preset voltage level, the storageand output circuit 130 may enable the current control signal I_c, latchthe enabled second voltage detection signal D_s2, and output the latchedsignal as the power control signal IO_pc. On the other hand, when thesecond voltage detection signal D_s2 is disabled or the voltage level ofthe second voltage VDD becomes lower than the preset voltage level, thestorage and output circuit 130 may disable the current control signalI_c and disable the power control signal IO_pc at a low level.

At this time, the first voltage VCCQ may be supplied to the plurality ofdata input/output circuits 200 of FIG. 1, and the second voltage VDD maybe supplied to the core circuit 300 of FIG. 1. The power control signalIO_pc may be inputted to the plurality of data input/output circuits200. The plurality of data input/output circuits 200 may be activatedwhen the power control signal IO_pc is enabled, and deactivated when thepower control signal IO_pc is disabled.

Since the first voltage detection circuit 110 of FIG. 7 can beconfigured in the same manner as the first voltage detection circuit 110of FIG. 2, the description for the configuration of the first voltagedetection circuit 110 of FIG. 7 may be replaced with the description forthe configuration of the first voltage detection circuit 110 of FIG. 2.

FIG. 8 is a configuration diagram illustrating the second voltagedetection circuit 120 of FIG. 7.

As illustrated in FIG. 8, the second voltage detection circuit 120 mayinclude a first current source circuit 121, a first current sink circuit122, a second current source circuit 123, a third current source circuit124, a third capacitor C3 and a third inverter IV3.

The first current source circuit 121 may supply a current to the secondnode N_B in response to the current control signal I_c. For example,when the current control signal I_c is disabled at a low level, thefirst current source circuit 121 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B. On theother hand, when the current control signal I_c is enabled at a highlevel, the first current source circuit 121 may stop supplying thecurrent to the second node N_B.

The first current source circuit 121 may include a third capacitor C3, asecond transistor P2 and a resistor R.

The third capacitor C3 may have one terminal coupled to a gate of thesecond transistor P2 and the other terminal coupled to a ground terminalVSS.

The second transistor P2 may have the gate configured to receive thecurrent control signal I_c, a source configured to receive the firstvoltage VCCQ, and a drain coupled to one terminal of the resistor R.

The resistor R may have the one terminal coupled to the drain of thesecond transistor P2 and the other terminal coupled to the second nodeN_B.

When the first voltage detection signal D_s1 is enabled and the voltagelevel of the second voltage VDD becomes equal to or higher than thesecond set voltage level, the first current sink circuit 122 may lowerthe voltage level of the second node N_B by passing the current of thesecond node N_B to the ground terminal VSS.

The first current sink circuit 122 may include third and fourthtransistors N1 and N2.

The third transistor N1 may have a gate configured to receive the firstvoltage detection signal D_s1 and a drain coupled to the second nodeN_B.

The fourth transistor N2 may have a gate configured to receive thesecond voltage VDD, a drain coupled to the source of the thirdtransistor N1, and a source coupled to the ground terminal VSS.

When the first voltage detection signal D_s1 is disabled, the secondcurrent source circuit 123 may raise the voltage level of the secondnode N_B by supplying a current to the second node N_B.

The second current source circuit 123 may include a fifth transistor P3.

The fifth transistor P3 may have a gate configured to receive the firstvoltage detection signal D_s1, a source configured to receive the firstvoltage VCCQ, and a drain coupled to the second node N_B.

When the voltage level of the first voltage VCCQ becomes higher than thefirst set voltage level and the voltage level of the second voltage VDDis lower than the second set voltage level, the third current sourcecircuit 124 may raise the voltage level of the second node N_B byapplying a current to the second node N_B. When the voltage level of thesecond voltage VDD is higher than the second set voltage level, thethird current source circuit 124 may interrupt the current applied tothe second node N_B.

The third current source circuit 124 may be configured to perform afourth inversion operation. For example, the third current sourcecircuit 124 may include a sixth transistor N3, a seventh transistor P4and a fourth inverter IV4.

The sixth transistor N3 may have a gate configured to receive an outputsignal of the fourth inverter IV4, a drain coupled to the second nodeN_B, and a source configured to receive the first voltage VCCQ.

The seventh transistor P4 may have a source configured to receive thefirst voltage VCCQ and a gate and drain coupled in common.

The fourth inverter IV4 may have an input terminal configured to receivethe second voltage VDD and a voltage terminal coupled to the drain ofthe seventh transistor P4.

The fourth capacitor C4 may have one terminal configured to receive thefirst voltage VCCQ and the other terminal coupled to the second nodeN_B.

The third inverter IV3 may invert the voltage level of the second nodeN_B and output the inverted voltage level as the second voltagedetection signal D_s2. The third inverter IV3 may have an input terminalcoupled to the second node N_B and an output terminal configured tooutput the second voltage detection signal D_s2.

FIG. 9 is a configuration diagram illustrating the storage and outputcircuit 130 of FIG. 7.

As illustrated in FIG. 9, the storage and output circuit 130 may includea control signal generation circuit 131, a switch 132, a latch circuit133, a fifth capacitor C5 and a power control signal output circuit 134.

When the second voltage detection signal D_s2 is enabled, the controlsignal generation circuit 131 may enable a switch control signal SW_cand the current control signal I_c. For example, when the second voltagedetection signal D_s2 is enabled, the control signal generation circuit131 may enable the switch control signal SW_c for a preset time.Furthermore, the control signal generation circuit 131 may enable thecurrent control signal I_c when the second voltage detection signal D_s2is enabled, and disable the current control signal I_c when the secondvoltage detection signal D_s2 is disabled. When enabled by the secondvoltage detection signal D_s2, the switch control signal SW_c may bedisabled after retaining the enabled state for the preset time.

The control signal generation circuit 131 may include a Schmitt triggercircuit 131-1, a first delay circuit 131-2, and a second delay circuit131-2. The control signal generation circuit 131 may also be configuredto perform an AND operation. For example, control signal generationcircuit 131 may include an AND gate AND. [00137] The Schmitt triggercircuit 131-1 may generate a high-level output signal when the voltagelevel of the second voltage detection signal D_s2 becomes higher than apreset voltage level or the second voltage detection signal D_s2 isenabled at a high level. On the other hand, the Schmitt trigger circuit131-1 may generate a low-level output signal when the voltage level ofthe second voltage detection signal D_s2 becomes lower than the presetvoltage level or the second voltage detection signal D_s2 is disabled ata low level.

The first delay circuit 131-2 may delay and invert the output signal ofthe Schmitt trigger circuit 131-1, and output the delayed and invertedsignal.

The second delay circuit 131-3 may delay and invert the output signal ofthe first delay circuit 131-2, and output the delayed and invertedsignal as the current control signal I_c.

The AND gate AND may receive the output signals of the Schmitt triggercircuit 131-1 and the first delay circuit 131-2, and generate the switchcontrol signal SW_c. For example, the AND gate AND may generate theswitch control signal SW_c which is enabled at a high level only duringa period in which both of the output signals of the Schmitt triggercircuit 131-1 and the first delay circuit 131-2 are at a high level. Atthis time, the enable period of the switch control signal SW_c may beequal to the delay time of the first delay circuit 131-2.

When the switch control signal SW_c is enabled, the switch 132 mayoutput the second voltage detection signal D_s2 as a latch inversionsignal L_sb. On the other hand, when the switch control signal SW_c isdisabled, the switch 132 may stop the operation of outputting the secondvoltage detection signal D_s2 as the latch inversion signal L_sb.

The latch circuit 133 may latch and invert the latch inversion signalL_sb, and output the latched and inverted signal as a latch signal L_s.

The latch circuit 133 may be configured to perform a fourth and fifthinversion operation. For example, the latch circuit 133 may includefourth and fifth inverters IV4 and IV5.

The fourth inverter IV4 may receive the latch inversion signal L_sb,invert the received signal, and output the inverted signal as the latchsignal L_s.

The fifth inverter IV5 may receive the output signal of the fourthinverter IV4, invert the received signal, and input the inverted signalas an input signal of the fourth inverter IV4.

At this time, the fifth capacitor C5 may be coupled to a node to whichthe switch 132 and the latch circuit 133 are coupled. The fifthcapacitor C5 may have one terminal coupled to the node to which theswitch 132 and the latch circuit 133 are coupled and the other terminalcoupled to the ground terminal VSS. The switch 132 may transfer thesecond voltage detection signal D_s2 to the latch circuit 133 when theswitch control signal SW_c is enabled, and electrically separate thesecond voltage detection signal D_s2 from the latch circuit 133 when theswitch control signal SW_c is disabled.

The power control signal output circuit 134 may be configured to performa sixth inversion operation. For example, the power control signaloutput circuit 134 may include eighth to 14th transistors N4 to N7 andP4 to P6, a sixth inverter IV6 and a sixth capacitor C6.

The eighth transistor N4 may have a gate configured to receive thesecond voltage VDD.

The ninth transistor N5 may have a gate configured to receive the secondvoltage VDD.

The tenth transistor N6 may have a gate configured to receive the latchsignal Ls, a source coupled to the ground terminal VSS, and a draincoupled to the source of the eighth transistor N4.

The eleventh transistor N7 may have a gate configured to receive thelatch inversion signal L_sb, a source coupled to the ground terminalVSS, and a drain coupled to the source of the ninth transistor N5.

The twelfth transistor P5 may have a gate coupled to the drain of theninth transistor N5, a source configured to receive the first voltageVCCQ, and a drain coupled to the drain of the eighth transistor N4.

The thirteenth transistor P6 may have a gate coupled to the drain of theeighth transistor N4, a source configured to receive the first voltageVCCQ, and a drain coupled to the drain of the ninth transistor N5.

The fourteenth transistor P7 may have a gate configured to receive thesecond voltage detection signal D_s2, a source configured to receive thefirst voltage VCCQ, and a drain coupled to a node to which the ninth and13th transistors N5 and P6 are coupled in common.

The sixth inverter IV6 may have an input terminal coupled to a node towhich the ninth, 13th and 14th transistors N5, P6 and P7 are coupled incommon, and an output terminal configured to output the power controlsignal IO_pc.

The sixth capacitor C6 may have one terminal coupled to the outputterminal of the sixth inverter IV6 and the other terminal coupled to theground terminal VSS.

Referring to FIGS. 7 to 10, the semiconductor apparatus having theabove-described configuration in accordance with the present embodimentwill be described as follows.

Referring to FIG. 3, the operation of the first voltage detectioncircuit 110 will be described.

When the voltage level of the first voltage VCCQ becomes higher than thefirst set voltage level, the first transistor P1 may be turned on toraise the voltage level of the first node N_A. The voltage level of thefirst node N_A may be outputted as the first voltage detection signalD_s1 through the first and second inverters IV and IV2.

Consequently, when the voltage level of the first voltage VCCQ becomeshigher than the first set voltage level, the first voltage detectioncircuit 110 may enable the first voltage detection signal D_s1 at a highlevel.

Referring to FIG. 8, the operation of the second voltage detectioncircuit 120 will be described.

When the current control signal I_c is disabled at a low level, thefirst current source circuit 121 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B.

When the first voltage detection signal D_s1 is enabled at a high leveland the voltage level of the second voltage VDD becomes higher than thesecond set voltage level, the first current sink circuit 122 may lowerthe voltage level of the second node N_B by passing the current of thesecond node N_B to the ground terminal VSS.

When the first voltage detection signal D_s1 is disabled at a low level,the second current source circuit 123 may raise the voltage level of thesecond node N_B by supplying a current to the second node N_B.

When the voltage level of the first voltage VCCQ becomes higher than thefirst set voltage level and the voltage level of the second voltage VDDbecomes lower than the second set voltage level, the third currentsource circuit 124 may raise the voltage level of the second node N_B byapplying a current to the second node N_B. When the voltage level of thesecond voltage VDD becomes higher than the second set voltage level, thethird current source circuit 124 may interrupt the current applied tothe second node N_B.

The third inverter IV3 may invert the voltage level of the second nodeN_B and output the inverted voltage level as the second voltagedetection signal D_s2.

Consequently, when the first voltage detection signal D_s1 is enabled ata high level and the voltage level of the second voltage VDD becomeshigher than the second set voltage level, the second voltage detectioncircuit 120 may enable the second voltage detection signal D_s2 at ahigh level. On the other hand, when the first voltage detection signalD_s1 is disabled at a low level or the current control signal I_c isdisabled at a low level, the second voltage detection circuit 120 maydisable the second voltage detection signal D_s2 at a low level.

Referring to FIG. 9, the operation of the storage and output circuit 130will be described.

The second voltage detection signal D_s2 may be delayed by the delaytimes of the first and second delay circuits 131-2 and 131-3, andoutputted as the current control signal I_c.

When the second voltage detection signal D_s2 is enabled, the switchcontrol signal SW_c having an enable period corresponding to the delaytime of the first delay circuit 131-2 may be generated.

During the enable period of the switch control signal SW_c, the secondvoltage detection signal D_s2 may be inputted to the latch circuit 133.

The latch circuit 133 may latch the second voltage detection signalD_s2, and output the latched signal as the latch signal L_s and thelatch inversion signal L_sb. At this time, the latch signal L_s and thelatch inversion signal L_sb may have levels opposite to each other.

When the latch signal L_s is enabled at a high level or the secondvoltage VDD becomes lower than the preset voltage level, the powercontrol signal output circuit 134 may output the power control signalIO_pc which is disabled at a low level. On the other hand, when thelatch signal L_s is disabled at a low level or the second voltage VDDbecomes higher than the preset voltage level, the power control signaloutput circuit 134 may output the power control signal IO_pc which isenabled at a high level. Furthermore, when the 25 second voltagedetection signal D_s2 is disabled at a low level, the power controlsignal output circuit 134 may output the power control signal IO_pcwhich is disabled at a low level.

Consequently, when the second voltage VDD is higher than the presetvoltage level and the second voltage detection signal D_s2 is enabled ata high level, the storage and output circuit 130 may output the currentcontrol signal I_c and the power control signal IO_pc which are enabledat a high level. When the second voltage detection signal D_s2 isdisabled at a low level or the second voltage VDD is lower than thepreset voltage level, the storage and output circuit 130 may output thecurrent control signal I_c and the power control signal IO_pc which aredisabled at a low level.

The control circuit 100 including the first voltage detection circuit110, the second voltage detection circuit 120 and the storage and outputcircuit 130, which operate as described above, may enable the powercontrol signal IO_pc at a high level, when the first voltage VCCQbecomes higher than the first set voltage level and the second voltageVDD becomes higher than the second set voltage level as illustrated inthe timing diagram of FIG. 10. On the other hand, when the voltage levelof the first voltage VCCQ becomes lower than the first set voltage levelor the second voltage VDD becomes lower than the second set voltagelevel, the control circuit 100 may disable the power control signalIO_pc at a low level.

The data input/output circuits 200 of FIG. 1 may be activated only inthe enable period of the power control signal IO_pc, and input/outputdata.

The control circuit illustrated in FIGS. 2 and 3 may activate the datainput/output circuits only when both of the first and second voltagesbecome higher than the set voltage levels. The control circuit of FIG. 2may deactivate the data input/output circuit when the first voltagebecomes lower than the preset voltage level, and the control circuit ofFIG. 3 may deactivate the data input/output circuit when any one of thefirst and second voltages becomes lower than the preset voltage level.

The semiconductor apparatus in accordance with the present embodimentcan reduce power consumption.

FIG. 11 is a diagram illustrating a configuration of a level shifteraccording to an embodiment of the present disclosure.

As illustrated in FIG. 11, a level shifter 10 a according to anembodiment includes a current mirror 200, a first adjusting circuit 300,and a second adjusting circuit 400.

The level shifter 10 a according to an embodiment may further include athird adjusting circuit 500.

All unit elements constituting the level shifter 10 a according to anembodiment, for example, transistors may use a low operation voltage ascompared with transistors in the related art and thus the transistorsmay be designed with a thin gate oxide element. Accordingly, the circuitdimension of the transistor may be reduced.

The current mirror 200 may receive an input signal IN in response to afirst power voltage VCCQ and output an output signal OUT by mirroring acurrent corresponding to a second power voltage VDD based on a level ofthe input signal IN.

The second power voltage VDD may have a higher voltage level than thefirst power voltage VCCQ.

The current mirror 200 may include an inverter INV1 and a plurality ofswitching elements NM1, NM2, PM1, PM2, and PM3.

A first current path of the current mirror 200 may be formed by aplurality of switching elements PM1, PM4, NM3, and NM1.

A second current path of the current mirror 200 may be formed by aplurality of switching elements PM2, NM4, NM5, and NM2.

The first adjusting circuit 300 may be coupled to an output voltage OUTterminal of the current mirror 200 and configured to adjust a voltagelevel of the output voltage OUT terminal based on a first bias voltageVbias_1.

The first adjusting circuit 300 may include a switching element PM4.

The second adjusting circuit 400 may be coupled to a second powervoltage VDD terminal in parallel to the current mirror 200 andconfigured to adjust the voltage level of the output voltage OUTterminal of the current mirror 200.

The second adjusting circuit 400 may include an output voltagecompensation unit 410 and a compensation voltage generation unit 420.

The output voltage compensation unit 410 may prevent the voltage levelof the output voltage OUT terminal from being lowered less than avoltage level increased through the first adjusting circuit 300 inresponse to a compensation voltage V_TIE.

The compensation voltage generation unit 420 may be coupled to thesecond power voltage VDD terminal in parallel to the current mirror 200and may generate the compensation voltage V_TIE.

The second adjusting circuit 400 may include a plurality of switchingelements PM5, PM6, NM6, and NM7.

The third adjusting circuit 500 may be coupled to the first current pathand the second current path of the current mirror 200 and configured toadjust voltage levels of the first current path and the second currentpath and to block a leakage current in the second current path.

The third adjusting circuit 500 may include a first adjusting unit 510and a second adjusting unit 520.

The first adjusting unit 510 may adjust the voltage levels of the firstcurrent path and the second current path of the current mirror 200 inresponse to the first power voltage VCCQ.

The second adjusting unit 520 may block the leakage current of thesecond current path of the current mirror 200 in response to theinverted input signal INB.

The third adjusting circuit 500 may include a delay circuit 521 and aplurality of switching elements NM3, NM4, and NM5.

For example, when it is assumed that the first power voltage VCCQ is 0.8V and the second power voltage VDD is 1.2 V, node voltage differencesVds, Vgs, and Vg have to be maintained, for example, to 1.06 V or beloweven in any operation condition to guarantee the reliability of allelements constituting the level shifter 10 a.

Accordingly, the level shifter 10 a according to an embodiment may bedesigned to satisfy the above-described node voltage differencecondition by constituting the first adjusting circuit 300 and the secondadjusting circuit 400 and may improve stability and leakage currentpreventing capacity by additionally constituting the third adjustingcircuit 500.

One terminal of a first switching element NM1 may be coupled to a groundterminal, the other terminal thereof may be coupled to a node Node_B,and a control terminal thereof may receive the input signal IN.

One terminals of the plurality of switching elements NM1, NM2, PM1, PM2,and PM3 may be sources or drains, the other terminals thereof may bedrains or sources, and control terminals thereof may be gates.

The inverter INV1 may generate an inverted input signal INB by invertingthe input signal IN.

One terminal of a second switching element NM2 may be coupled to theground terminal, the other terminal thereof may be coupled to a nodeNode_E, and a control terminal thereof may receive the inverted inputsignal INB.

One terminal of a third switching element PM1 may be coupled to thesecond power voltage VDD terminal and the other terminal thereof may becoupled to the output voltage OUT terminal.

One terminal of a fourth switching element PM2 may be coupled to thesecond power voltage VDD terminal and the other terminal thereof may becoupled to a node Node_C.

One terminal of a fifth switching element PM3 may be coupled to thesecond power voltage VDD terminal, the other terminal thereof may becommonly coupled to the control terminals of the third and fourthswitching elements PM1 and PM2, and a control terminal thereof mayreceive the output voltage OUT.

One terminal of a sixth switching element PM4 may be coupled to theoutput voltage OUT terminal, the other terminal thereof may be coupledto a node Node_A, and a control terminal thereof may receive the firstbias voltage Vbias_1.

The first bias voltage Vbias_1 may be, for example, 0.12V. In otherembodiments, the first bias voltage Vbias_1 may be different from 0.12V.

Since the sixth switching element PM4 may receive the first bias voltageVbias_1 through the control terminal (for example, the gate), the outputvoltage OUT may be set to have a variation range corresponding to avoltage range (for example, Vbias_1+Vth_PM4 to VCCQ) in an AC operationand may be set to be fixed to a voltage level (for example,Vbias_1+Vth_PM4 or VCCQ) in a DC operation. Accordingly, theabove-described node voltage difference condition may be satisfied.Here, the “Vth_PM4” is a threshold voltage of the sixth switchingelement PM4.

One terminal of a seventh switching element PM6 may be coupled to thesecond power voltage VDD terminal, the other terminal thereof may becoupled to the output voltage OUT terminal, and a control terminalthereof may receive the compensation voltage V_TIE.

Eighth to tenth switching elements PM5, NM6, and NM7 may be coupledbetween the second power voltage VDD terminal and the ground voltage inseries and may generate the compensation voltage V_TIE in response tothe second power voltage VDD.

The current mirroring of the seventh switching element PM6 may beaccomplished in response to the compensation voltage V_TIE generatedthrough the eighth to tenth switching elements PM5, NM6, and NM7 and thecurrent according to the current mirroring may be supplied to the outputvoltage OUT terminal.

Since the current is continuously supplied to the output voltage OUTterminal through the seventh switching element PM6, the output voltageOUT may be prevented from being lowered less than the voltage level ofVbias_1+Vth_PM4 even when the input signal IN of a high level is inputto the control terminal of the first switching element NM1.

The seventh switching element PM6 may prevent the voltage level of theoutput voltage OUT from being lowered less than the voltage level ofVbias_1+Vth_PM4, and thus the operation reliability of the thirdswitching element PM1 may be guaranteed.

One terminal of an eleventh switching element NM3 which is arranged inthe first current path may be coupled to the node Node_A, the otherterminal thereof may be coupled to the node Node_B, and a controlterminal thereof may receive the first power voltage VCCQ.

Since the first power voltage VCCQ is applied to the control terminal ofthe eleventh switching element NM3, the eleventh switching element NM3may drop the voltage of the node Node_B by the voltage level ofVDD−Vth_NM3 (i.e., the voltage level of the first power voltage VCCQminus the threshold voltage of the switching element NM3) and thus theoperation reliability of the first switching element NM1 may beimproved.

One terminal of a twelfth switching element NM4 which is arranged in thesecond current path may be coupled to the node Node_C, the otherterminal thereof may be coupled to the node Node_D, and a controlterminal thereof may receive the first power voltage VCCQ.

The twelfth switching element NM4 may also be operated in the samemanner as the eleventh switching element NM3 and the operationreliability of a thirteenth switching element NM5 to be described latermay be improved.

The delay circuit 521 may be configured of an inverter array 521including a plurality of inverters 522.

The inverter array 521 may generate a delayed input signal IN_Delay bydelaying and inverting the inverted input signal INB.

One terminal of the thirteenth switching element NM5 may be coupled tothe node Node_D, the other terminal thereof may be coupled to the nodeNode_E, and a control terminal thereof may receive the delayed inputsignal IN_Delay.

The thirteenth switching element NM5 may operate with a time delay withrespect to the second switching element NM2 in response to the delayedinput signal IN_Delay and mitigate the current path from being formedbeyond a certain time or more required for the level transition of theoutput voltage OUT terminal and thus the leakage current may beminimized.

FIG. 12 is a diagram illustrating a configuration of a driver circuitaccording to an embodiment of the present disclosure.

As illustrated in FIG. 12, a driver circuit 700 according to anembodiment may include a level shifter 800 and a pull-up/pull-downcircuit 900.

The level shifter 800 may have the same configuration as that of thelevel shifter 10 a of FIG. 11.

The level shifter 800 may receive data DATA provided from an externalapparatus such as a memory controller, a host device, and the like usingthe first bias voltage Vbias_1, adjust a level variation range of thedata DATA to a level suitable for an apparatus (for example, asemiconductor memory) which uses the data, and generate thelevel-adjusted data as an output signal PG.

The data DATA may have a voltage variation range (0 V−VDD) of from aground voltage level to a first power voltage VCCQ level.

The output signal PG of the level shifter 800 may have a variation rangecorresponding to a voltage range of Vbias_1+Vtp−VCCQ.

The pull-up/pull-down circuit 900 may include a plurality of switchingelements PM11, PM12, NM11, and NM12 coupled between the second powervoltage VDD terminal and the ground voltage terminal in series.

The first switching element PM11 may receive the output signal PG of thelevel shifter 800 through a control terminal thereof.

The second switching element PM12 may receive a second bias voltageVbias_2 through a control terminal thereof.

The first switching element PM11 and the second switching element PM12may pull up a level of an output terminal PAD to a second power voltageVCCQ level.

The output terminal PAD may be an input/output (I/O) pad of thesemiconductor memory.

The third switching element NM11 may receive the first power voltageVCCQ through a control terminal thereof.

The fourth switching element NM12 may receive the data DATA through acontrol terminal thereof.

The third switching element NM11 and the fourth switching element NM12may pull down the level of the output terminal PAD to the ground voltagelevel.

As described above with reference to FIG. 12, the level shifter 800 maysatisfy the node voltage difference conditions of all the elementsconstituting the level shifter 800 and thus the output voltage PG of thelevel shifter 800 may also have a variation range corresponding thevoltage range of Vbias_1+Vtp˜VCCQ. Accordingly, the high-speed operationof the first switching element PM11 which substantially conducts adriving operation of the driver circuit 700 may be accomplished andoperation reliability of the first switching element PM11 may also beimproved.

FIG. 13 is a block diagram illustrating a semiconductor apparatus inaccordance with an embodiment.

Referring to FIG. 13, the semiconductor apparatus 1000 a may include acontrol circuit 100 and a level shifter 150.

The control circuit 100 may have the configurations of FIGS. 2 to 5and/or FIGS. 7 to 9. As described above, the control circuit 100 maygenerate the power control signal IO_pc.

FIG. 14 is a diagram illustrating a configuration of the level shifterof FIG. 13.

As illustrated in FIG. 14, a level shifter 150 according to anembodiment includes a current mirror 200, a first adjusting circuit 300,a second adjusting circuit 400 and a third adjusting circuit 500.

All unit elements constituting the level shifter 150 according to anembodiment, for example, transistors may use a low operation voltage ascompared with transistors in the related art and thus the transistorsmay be designed with a thin gate oxide element. Accordingly, the circuitdimension of the transistor may be reduced. For example, a thick oxidetransistor used for an existing level shifter has a gate length of 130nm to 230 nm. However, a thin oxide transistor in accordance with thepresent embodiment may have a gate length of 16 nm to 32 nm.

The current mirror 200 may receive input signals IN and INB, a firstvoltage VCCQ and a second voltage VDD. The current mirror 200 mayreceive the input signals IN and INB in response to the second voltageVDD and output an output signal OUT by mirroring a current correspondingto the first voltage VCCQ based on a level of the input signal IN.

The first voltage VCCQ may have a higher voltage level than the secondvoltage VDD. For example, the first voltage VCCQ may receive the powercontrol signal IO_pc.

The current mirror 200 may include an inverter INV1 and a plurality ofswitching elements NM1, NM2, PM1, PM2, and PM3. In the presentembodiment, NM may represent an NMOS transistor, and PM may represent aPMOS transistor.

A first current path ‘path 1’ of the current mirror 200 may be formed bya plurality of switching elements PM1, PM4, NM3, and NM1.

A second current path ‘path 2’ of the current mirror 200 may be formedby a plurality of switching elements PM2, NM4, NM5, and NM2.

The first adjusting circuit 300 may be provided in the current mirror200. The first adjusting circuit 300 may be coupled to an output voltageOUT terminal of the current mirror 200 and configured to adjust avoltage level of the output voltage OUT terminal based on a first biasvoltage Vbias_1.

The first adjusting circuit 300 may include a switching element PM4.

The second adjusting circuit 400 may be coupled between the firstvoltage VCCQ terminal in parallel to the current mirror 200 andconfigured to adjust the voltage level of the output voltage OUTterminal of the current mirror 200.

The second adjusting circuit 400 may include an output voltagecompensation unit 410 and a compensation voltage generation unit 420.

The output voltage compensation unit 410 may prevent a change of thevoltage level of the output voltage OUT terminal. The output voltagecompensation unit 410 may prevent the voltage level of the outputvoltage OUT terminal from being lowered less than a voltage levelincreased through the first adjusting circuit 300 in response to acompensation voltage V_TIE.

The compensation voltage generation unit 420 may be coupled to the firstvoltage VCCQ terminal in parallel to the current mirror 200 and maygenerate the compensation voltage V_TIE.

The second adjusting circuit 400 may include a plurality of switchingelements PM5, PM6, NM6, and NM7.

The third adjusting circuit 500 may be coupled to the first current path‘path 1’ and the second current path ‘path 2’ of the current mirror 200.The third adjusting circuit 500 may be configured to adjust voltagelevels of the first current path ‘path 1’ and the second current path‘path 2’ and to block a leakage current in the second current path ‘path2’.

The third adjusting circuit 500 may include a first adjusting unit 510and a second adjusting unit 520.

The first adjusting unit 510 may adjust the voltage levels of the firstcurrent path ‘path 1’ and the second current path ‘path 2’ of thecurrent mirror 200 in response to the second voltage VDD. The firstadjusting unit 510 may include switching elements NM3 and NM4.

The second adjusting unit 520 may block the leakage current of thesecond current path ‘path 2’ of the current mirror 200 in response tothe inverted input signal INB.

The second adjusting unit 520 may include a delay circuit 521 and aswitching element NM5. The delay circuit 521 may include a plurality ofinverters 522. The delay circuit 521 may delay the inverted input signalINB and output a delayed input signal IN_Delay. The switching elementNM5 may receive the delayed input signal IN_Delay as a gate signal.

A general level shifter is configured to receive the first voltage VCCQof 1.2V and the second voltage VDD of 0.8V. Thus, the level shifter isgenerally constituted by thick oxide transistors which are operated at adriving voltage of 1.2V. As well known, when the level shifter isconstituted by thick oxide transistors capable of receiving a drivingvoltage of 1.2V (for example, a gate voltage), a minimum of fourtransistors PM1, PM2, NM1 and NM2 are required.

The level shifter 150 in accordance with the present embodiment may beconstituted only by thin oxide transistors which are operated at adriving voltage of 0.8V (for example, gate voltage) unlike a generallevel shifter.

However, when the level shifter 150 is constituted by thin oxidetransistors driven at 0.8V, an additional adjusting unit, for example,an additional transistor is required to prevent a leakage current for1.2V. Thus, the level shifter 150 in accordance with the presentembodiment may require a larger number of transistors than the levelshifter according to the related art.

However, the thick oxide transistor driven at 1.2V has a gate length of130 nm to 230 nm, and the thin oxide transistor driven at 0.8V has agate length of 16 nm to 32 nm. For this reason, although the levelshifter 150 requires a larger number of thin oxide transistors than thelevel shifter according to the related art when the level shifter 150 isconfigured, the substantial area of the level shifter 150 in accordancewith the present embodiment is reduced, compared to the level shifteraccording to the related art.

For example, when it is assumed that the first voltage VCCQ is 1.2 V andthe second voltage VDD is 0.8 V, node voltage differences Vds, Vgs, andVg have to be maintained, for example, to 1.06 V or below even in anyoperation condition to guarantee the reliability of all elementsconstituting the level shifter 150.

Accordingly, the level shifter 150 according to an embodiment may bedesigned to satisfy the above-described node voltage differencecondition by constituting the first adjusting circuit 300 and the secondadjusting circuit 400 and may improve stability and leakage currentpreventing capacity by additionally constituting the third adjustingcircuit 500.

The switching elements PM3 to PM6 and NM3 to NM7 added to the levelshifter 150 in accordance with the present embodiment serve to lower thevoltages of the respective coupling nodes of the level shifter 150 to avoltage equal to or lower than the maximum allowable voltage (forexample, 1.06V) of the thin oxide transistor. Thus, although a voltageequal to or higher than the driving voltage of the thin oxide transistoris inputted, the level shifter 150 in accordance with the presentembodiment may perform a level shifting operation without a leakagecurrent. The coupling nodes may serve as not only Vgs, Vds and Vgdvoltage nodes of the switching elements PM1 to PM6 and NM1 to NM7constituting the level shifter 150, but also coupling units among theswitching elements PM1 to PM6 and NM1 to NM7.

The switching elements NM1, NM2 and PM1 to PM3 constituting the currentmirror 200 may be configured as follows.

One terminal of a first switching element NM1 may be coupled to a groundterminal, the other terminal thereof may be coupled to a node Node_B,and a control terminal thereof may receive the input signal IN.

One terminals of the plurality of switching elements NM1, NM2, PM1, PM2,and PM3 may be sources or drains, the other terminals thereof may bedrains or sources, and control terminals thereof may be gates.

The inverter INV1 may generate an inverted input signal INB by invertingthe input signal IN.

One terminal of a second switching element NM2 may be coupled to theground terminal, the other terminal thereof may be coupled to a nodeNode_E, and a control terminal thereof may receive the inverted inputsignal INB.

One terminal of a third switching element PM1 may be coupled to thefirst voltage VCCQ terminal and the other terminal thereof may becoupled to the output voltage OUT terminal.

One terminal of a fourth switching element PM2 may be coupled to thefirst voltage VCCQ terminal and the other terminal thereof may becoupled to a node Node_C.

One terminal of a fifth switching element PM3 may be coupled to thefirst voltage VCCQ terminal, the other terminal thereof may be commonlycoupled to the control terminals of the third and fourth switchingelements PM1 and PM2, and a control terminal thereof may receive theoutput voltage OUT.

One terminal of a sixth switching element PM4 may be coupled to theoutput voltage OUT terminal, the other terminal thereof may be coupledto a node Node_A, and a control terminal thereof may receive the firstbias voltage Vbias_1.

The first bias voltage Vbias_1 may be, for example, 0.12V to 0.14V. Thefirst bias voltage Vbias_1 is not limited only to 0.12V to 0.14V.

Since the sixth switching element PM4 may receive the first bias voltageVbias_1 through the control terminal (for example, the gate), the outputvoltage OUT may be set to have a variation range corresponding to avoltage range (for example, Vbias_1+Vth_PM4 to VCCQ) in an AC operation.The output voltage OUT may be set to be fixed to a voltage level (forexample, Vbias_1+Vth_PM4 or VCCQ) in a DC operation. Accordingly, theabove-described node voltage difference condition may be satisfied.

The switching elements PM5, PM6, NM6 and NM7 constituting the secondadjusting circuit 400 may be configured as follows.

One terminal of a seventh switching element PM6 corresponding to theoutput voltage compensation unit 410 may be coupled to the first voltageVCCQ terminal, the other terminal thereof may be coupled to the outputvoltage OUT terminal, and a control terminal thereof may receive thecompensation voltage V_TIE.

Eighth to tenth switching elements PM5, NM6, and NM7 corresponding tothe compensation voltage generation unit 420 may be coupled between thefirst voltage VCCQ terminal and the ground voltage terminal in seriesand may generate the compensation voltage V_TIE In response to the firstvoltage VCCQ. One terminal of the eighth switching element PM5 may becoupled to the first voltage VCCQ terminal, the other terminal thereofand a control terminal thereof may be coupled to one terminal of theninth switching element PM6, in common. The one terminal of the ninthswitching element NM6 may be coupled to the other terminal of the eighthswitching element PM5, the other terminal thereof may be coupled to oneterminal of tenth switching element NM7, and a control terminal thereofmay be coupled to the first voltage VCCQ terminal. The one terminal oftenth switching element NM7 may be coupled to the other terminal of theninth switching element NM6 and the other terminal and a controlterminal thereof may be coupled to the ground voltage terminal, incommon. Thus, the eighth switching element PM5 and the tenth switchingelement NM 7 may perform a diode operation.

The current mirroring of the seventh switching element PM6 may beaccomplished in response to the compensation voltage V_TIE generatedthrough the eighth to tenth switching elements PM5, NM6, and NM7 and thecurrent according to the current mirroring may be supplied to the outputvoltage OUT terminal.

Since the current is continuously supplied to the output voltage OUTterminal through the seventh switching element PM6, the output voltageOUT may be prevented from being lowered less than the voltage level ofVbias_1+Vth_PM4 even when the input signal IN of a high level is inputto the control terminal of the first switching element NM1.

The seventh switching element PM6 may prevent the voltage level of theoutput voltage OUT from being lowered less than the voltage level ofVbias_1+Vth_PM4, and thus the operation reliability of the thirdswitching element PM1 may be guaranteed. That is, although a leakagecurrent occurs in the third switching element PM1, a change of theoutput voltage which is caused by the leakage current can be preventedbecause the sixth switching element PM4 and the seventh switchingelement PM6 are coupled to the third switching element PM1. The thirdadjusting circuit 500 including the first and second adjusting units 510and 520 may be configured as follows.

The first adjusting unit 510 may include an eleventh switching elementNM3 and a twelfth switching element NM4. One terminal of the eleventhswitching element NM3 which is arranged in the first current path ‘path1’ may be coupled to the node Node_A, the other terminal thereof may becoupled to the node Node_B, and a control terminal thereof may receivethe second voltage VDD.

Since the second voltage VDD is applied to the control terminal of theeleventh switching element NM3, the eleventh switching element NM3 maydrop the voltage of the node Node_B by the voltage level of VDD−Vth_NM3(i.e., the voltage level of the second voltage VDD minus the thresholdvoltage of the switching element NM3) and thus the operation reliabilityof the first switching element NM1 may be improved.

One terminal of the twelfth switching element NM4 which is arranged inthe second current path ‘path 2’ may be coupled to the node Node_C, theother terminal thereof may be coupled to the node Node_D, and a controlterminal thereof may receive the second voltage VDD.

The twelfth switching element NM4 may also be operated in the samemanner as the eleventh switching element NM3 and the operationreliability of a thirteenth switching element NM5 to be described latermay be improved.

As described above, the second adjusting unit 520 may include a delaycircuit 521 and the thirteenth switching element NM5. The delay circuit521 may be configured of an inverter array 521 including a plurality ofinverters 522.

The inverter array 521 may generate a delayed input signal IN_Delay bydelaying and inverting the inverted input signal INB.

One terminal of the thirteenth switching element NM5 may be coupled tothe node Node_D, the other terminal thereof may be coupled to the nodeNode_E, and a control terminal thereof may receive the delayed inputsignal IN_Delay.

The thirteenth switching element NM5 may operate with a time delay withrespect to the second switching element NM2 in response to the delayedinput signal IN_Delay and mitigate the current path from being formedbeyond a certain time or more required for the level transition of theoutput voltage OUT terminal and thus the leakage current may beminimized. When the second switching element NM2 is turned on, thethirteenth switching element NM5 is turned off. Thus, a leakage currentpath formed among the twelfth switching element NM4, the thirteenthswitching element NM5 and the second switching element NM2 from thefirst voltage VCCQ terminal is blocked. In the AC mode, the thirteenthswitching element NM5 may receive the delayed input signal IN_Delay, andthus momentarily lower the voltage levels of the voltage nodes Node_C,Node_D and Node_E. Therefore, the performance of the switching elementsPM1 and PM2 configured to receive the voltage of the voltage node Node_Ccan be improved.

FIG. 15 is a diagram illustrating output timings of the respective nodesof the level shifter of FIG. 14 according to an AC simulation.

Referring to FIG. 15, input signals IN and INB swing in a range of 0V to0.8V (VDD), and an output voltage OUT swings in a range of 0.5V to 1.2V(VCCQ), in an AC manner.

The low level of the output voltage OUT may be set to 0.5V higher than0V by an operation of the second adjusting circuit 300. Morespecifically, the sixth switching element PM4 of the second adjustingcircuit 300 may receive a bias voltage Vbias_1 (for example, 0.14V) as agate voltage. Under the supposition that the threshold voltage of thesixth switching element PM4 is −0.36V, for example, the sixth switchingelement PM4 is turned off when the source voltage of the sixth switchingelement PM4 becomes Vbias_1+Vth_PM4 (for example, 0.5V). Thus, when thefirst voltage VCCQ is 0V, the output voltage OUT is outputted as atleast 0.5V.

Since the seventh switching element PM6 receives the compensationvoltage V_TIE generated by the compensation voltage generation unit 420as the gate voltage thereof, the seventh switching element PM6 maycontinuously supply a small amount of current to the output voltage OUTterminal. Thus, when the input signal IN inputted to the gate of thefirst switching element NM1 is enabled to a high level, the outputvoltage OUT is not lowered to Vbias_1+Vth_PM4 or less.

Since the output voltage OUT toggles at a voltage of 0.5V to 1.2V, thevoltage Vds of the third switching element PM1 on the first current path‘path 1’ has a level of VCCQ-OUT. Therefore, the third switching elementPM1 is driven at a voltage lower than the maximum allowable voltage atall times. The node Node_A on the first current path ‘path 1’ is a drainnode of the sixth switching element PM4. Since the sixth switchingelement PM4 receives the bias voltage Vbias_1 of 0.14V through a gatethereof and outputs the output voltage OUT through a source thereof, thevoltage Vnode_A of the node A has a voltage level lower than the outputvoltage OUT, for example, OUT-Vbias_1. Thus, a reliability issue doesnot occur in the third switching element PM1 and the sixth switchingelement PM4, either. In the present embodiment, the maximum allowablevoltage may indicate the maximum voltage at which a transistor canoperate without a breakdown and punch-through. Thus, the reliabilityissue may indicate a leakage current caused by a breakdown orpunch-through.

The node Node_B on the first current path ‘path 1’ corresponds to thesource of the eleventh switching element NM3. The first switchingelement NM1 receives the second voltage VDD of 0V to 0.8V through a gatethereof, and receives the voltage Vnode_A of the Node_A through a drainthereof. Thus, since the voltage Vnode_B of the Node_B becomesVnode_A−Vth_NM3 (about 0V to 0.58V) which is lower than the voltageVnode_A of the Node A, a reliability issue does not occur in theeleventh switching element NM3, either.

Then, the input signal IN toggling at a voltage of 0V to 0.8V isreceived through the gate of the first switching element NM1, and thevoltage Vnode_B of the Node_B is applied to the drain of the firstswitching element NM1. Thus, a reliability issue does not occur in thefirst switching element NM1, either.

The node Node_C on the second current path ‘Path 2’ corresponds to thegates of the third and fourth switching elements PM1 and PM2 and thedrain of the fifth switching element PM3. The voltage Vnode_C of theNode C becomes VCCQ-Vth_PM2, and the simulation result was detected as avoltage of 0.23V to 0.85V.

Thus, since the voltage Vnode_C of the Node C is lower than the maximumallowable voltage of 1.06V, a reliability issue does not occur in thefourth switching element PM2, either.

The node Node_D of the second current path ‘path2’ corresponds to thesource of the twelfth switching element NM4. Since the twelfth switchingelement NM4 receives the second voltage VDD of 0V to 0.8V through a gatethereof and receives the voltage Vnode_C of the Node C through a drainthereof, the voltage Vnode_D of the node Node_D becomes Vnode_C−Vth_NM4.The simulation result shows that the voltage Vnode_D of the Node_D has arange value of 0.1V to 0.55V, which is lower by the threshold voltage ofthe twelfth switching element NM4 than the voltage Vnode_C of the NodeC. Therefore, all the voltages Vgs, Vgd and Vds of the twelfth switchingelement NM4 become equal to or less than the maximum allowable voltageof 1.06V.

The node Node_E on the second current path ‘path 2’ corresponds to thesource of the thirteenth switching element NM5. The thirteenth switchingelement NM5 receives the delayed input voltage IN_delay, which togglesat a voltage of 0V to 0.8V, through a gate thereof, and receives thevoltage Vnode_D of the Node D through a drain thereof. Therefore, thevoltage Vnode_E of the Node_E may be set to a level lower by thethreshold voltage Vth_NM5 of the thirteenth switching element NM5 thanthe voltage Vnode_D of the node D Node_D. Thus, a reliability issue doesnot occur in the thirteenth switching element NM5, either.

Since the second switching element NM2 of the second current path‘path2’ receives the second voltage VDD through a gate thereof andreceives the voltage Vnode_E of the Node_E through a drain thereof, areliability issue does not occur in the second switching element NM2,either.

Table below shows the voltage levels of the nodes.

Simulation- results When the VCCQ = 0 V~1.2 V and Voltage level VDD = 0V~0.8 V Vnode OUT-Vbias_1 About A 0.36~1.06 V Vnode VNode A-Vth_NM3About B 0 V~0.58 V Vnode VCCQ-Vth_PM2 About C 0.23 V~0.85 V VnodeVnode_C-Vth_NM4 About D 0.1 V~0.55 V Vnode Vnode_D-Vth_NM5 Less than E0.3 V OUT Vbias_1 + Vth_PM4~VCCQ About 0.5 V~1.2 V

Therefore, since most of the transistors constituting the level shifter150 are driven in a voltage range being less than the maximum allowablevoltage range, a leakage current issue can be prevented even though thelevel shifter is constituted by thin oxide transistors.

FIG. 16 is a circuit diagram illustrating a configuration of the levelshifter of FIG. 13 in accordance with an embodiment.

Referring to FIG. 16, a level shifter 150 a in accordance with thepresent embodiment may further include first to third stabilizationswitches NM8, NM9 and NM10 in addition to the components of the levelshifter 150 of FIG. 14.

The first stabilization switch NM8 may be coupled between the firstvoltage VCCQ terminal and the output voltage OUT terminal. The firststabilization switch NM8 may be an NMOS transistor, for example, andoutput the first voltage VCCQ as the output voltage OUT in response tothe power control signal IO_pc.

The second stabilization switch NM9 may be coupled between the Node_Band the first switching element NM1. The second stabilization switch NM9may also be configured as an NMOS transistor. The second stabilizationswitch NM9 may stably transfer the voltage Vnode_B of the Node_B to thedrain of the first switching element NM1 in response to the powercontrol signal IO_pc.

The third stabilization switch NM10 may be coupled between the Node_Eand the second switching element NM2. The third stabilization switchNM10 may also be configured as an NMOS transistor. The thirdstabilization switch NM10 may stably transfer the voltage of the Node_Eto the drain of the second switching element NM2 in response to thepower control signal IO_pc.

The level shifter 150 a in accordance with the present embodiment may bedriven when the power voltage is stable, and thus perform a stable levelshifting operation.

FIG. 17 is a diagram illustrating a configuration of a driver circuitaccording to an embodiment of the present disclosure.

As illustrated in FIG. 17, a driver circuit 700 according to anembodiment may include a level shifter 800 and a pull-up/pull-downcircuit 900.

The level shifter 800 may have the same configuration as that of thelevel shifter 150 of FIG. 14 or FIG. 16.

The level shifter 800 may receive data DATA provided from an externalapparatus (not shown) such as a memory controller, a host device, andthe like using the first bias voltage Vbias_1, adjust a level variationrange of the data DATA to a level suitable for an apparatus (forexample, a semiconductor memory) which uses the data, and generate thelevel-adjusted data as an output signal PG.

The data DATA may have a voltage variation range (0 V−VDD) of from aground voltage level to a second voltage VDD level.

The output signal PG of the level shifter 800 may have a variation rangecorresponding to a voltage range of Vbias_1+Vtp−VCCQ.

The pull-up/pull-down circuit 900 may include a plurality of switchingelements PM11, PM12, NM11, and NM12 coupled between the first voltageVCCQ terminal and the ground voltage terminal in series.

The first switching element PM11 may receive the output signal PG of thelevel shifter 800 through a control terminal thereof.

The second switching element PM12 may receive a second bias voltageVbias_2 through a control terminal thereof.

The first switching element PM11 and the second switching element PM12may pull up a level of an output terminal PAD to a second power voltageVCCQ level.

The output terminal PAD may be an input/output (I/O) pad of thesemiconductor memory.

The third switching element NM11 may receive the second voltage VDDthrough a control terminal thereof.

The fourth switching element NM12 may receive the data DATA through acontrol terminal thereof.

The third switching element NM11 and the fourth switching element NM12may pull down the level of the output terminal PAD to the ground voltagelevel.

The level shifter 800 may satisfy the node voltage difference conditionsof all the elements constituting the level shifter 800 and thus theoutput voltage PG of the level shifter 800 may also have a variationrange corresponding the voltage range of Vbias_1+Vtp˜VCCQ. Accordingly,the high-speed operation of the first switching element PM11 whichsubstantially conducts a driving operation of the driver circuit 700 maybe accomplished and operation reliability of the first switching elementPM11 may also be improved.

While various embodiments have been described above, it will beunderstood to those skilled in the art that the embodiments describedare examples only. Accordingly, the operating method of a data storagedevice described herein should not be limited based on the describedembodiments.

What is claimed is:
 1. A semiconductor apparatus comprising: a controlcircuit configured to output a power control signal for activating adata input/output circuit operated by a first voltage when a voltagelevel of the first voltage is higher than that of a first set voltageand a voltage level of a second voltage is higher than that of a secondset voltage; and a level shifter configured to receive the power controlsignal and activate to lower an operating voltage of a device includinga plurality of transistors with a thin gate insulating layer based onthe power control signal.
 2. The semiconductor apparatus according toclaim 1, wherein the control circuit is configured to output the powercontrol signal for reducing power consumption of the data input/outputcircuit.
 3. The semiconductor apparatus according to claim 1, whereinthe control circuit comprises: a voltage detection circuit configured togenerate a voltage detection signal in response to the voltage level ofthe first voltage and the voltage level of the second voltage.
 4. Thesemiconductor apparatus according to claim 1, wherein the controlcircuit comprises: a voltage detection circuit configured to generate avoltage detection signal in response to the voltage level of the firstvoltage, the voltage level of the second voltage and a signal relatingto a detection of the first voltage.
 5. The semiconductor apparatusaccording to claim 1, wherein the control circuit comprises: a storageand output circuit configured to generate the power control signal inresponse to a voltage detection signal generated from a voltagedetection circuit.
 6. The semiconductor apparatus according to claim 1,wherein the control circuit comprises: a voltage detection circuitconfigured to generate a voltage detection signal when a signal relatingto the first voltage is enabled and the voltage level of the secondvoltage becomes equal to or higher than the second set voltage level. 7.The semiconductor apparatus according to claim 1, wherein the controlcircuit comprises: a voltage detection circuit configured to disable avoltage detection signal when a signal relating to a detection of thevoltage level of the first voltage is disabled.
 8. The semiconductorapparatus according to claim 1, wherein the control circuit comprises: astorage and output circuit configured to latch a voltage detectionsignal and output the latched signal as the power control signal whenthe voltage detection signal is enabled.
 9. The semiconductor apparatusaccording to claim 1, wherein the control circuit comprises: a voltagedetection circuit configured to enable a voltage detection signal when asignal relating to a detection of the first voltage is enabled and thevoltage level of the second voltage becomes higher than that of thesecond set voltage level; and a storage and output circuit configured toenable a current control signal when the voltage detection signal isenabled and the power control signal is generated by latching theenabled voltage detection signal.
 10. The semiconductor apparatusaccording to claim 1, wherein the control circuit comprises: a voltagedetection circuit configured to disable a voltage detection signal whena signal relating to a detection of the first voltage is disabled orwhen a current control signal is enabled.
 11. The semiconductorapparatus according to claim 3, wherein the voltage detection circuitfurther comprises: a first current source circuit configured to raise avoltage level of an input node of an inverter by passing a current tothe input node in response to the current control signal; and a currentsink circuit configured to lower the voltage level of the input node bysinking the current from the input node in response to the signalrelating to the detection of the first voltage and the voltage level ofthe second voltage, wherein the inverter is configured to receive thevoltage level of the input node and output the voltage detection signal.12. The semiconductor apparatus according to claim 11, wherein thevoltage detection circuit further comprises: a second current sourcecircuit configured to raise the voltage level of the input node bypassing a current to the input node in response to the signal relatingto the detection of the first voltage; a third current source circuitconfigured to raise the voltage level of the input node by passing acurrent to the input node in response to the current control signal. 13.The semiconductor apparatus according to claim 11, wherein the firstcurrent source circuit comprises: a capacitor having one terminalconfigured to receive the current control signal and the other terminalcoupled to a ground terminal; a transistor having a first nodeconfigured to receive the current control signal and a second nodeconfigured to receive the first voltage; and a resistor having oneterminal coupled to a third node of the transistor and the otherterminal coupled to the input node.
 14. The semiconductor apparatusaccording to claim 12, wherein the third current source circuit has afirst node configured to receive the first voltage, a second nodeconfigured to receive the current control signal, and a third nodecoupled to the input node.
 15. The semiconductor apparatus according toclaim 11, wherein the current sink circuit comprises: a first transistorhaving a first node configured to receive the second voltage and asecond node coupled to a ground terminal; and a second transistor havinga fourth node configured to receive the signal relating to the detectionof the first voltage, a fifth node coupled to the input node, and asixth node coupled to a third node of the first transistor.
 16. Thesemiconductor apparatus according to claim 5, wherein the storage andoutput circuit comprises: a control signal generation circuit configuredto generate a switch control signal which is enabled after the voltagedetection signal is enabled, delay the voltage detection signal andoutput the delayed signal as a current control signal; and a switchconfigured to output the voltage detection signal as a latch inversionsignal after the switch control signal is enabled.
 17. The semiconductorapparatus according to claim 16, wherein the storage and output circuitfurther comprises: a latch circuit configured to latch and invert thelatch inversion signal and output the latched and inverted signal as alatch signal; and a power control signal output circuit configured togenerate the power control signal by comparing the voltage levels of thelatch inversion signal and the latch signal.
 18. The semiconductorapparatus according to claim 16, wherein the control signal generationcircuit comprises: a Schmitt trigger circuit configured to generate ahigh-level output signal when the voltage detection signal is enabledand configured to generate a low-level output signal when the voltagedetection signal is disabled.
 19. The semiconductor apparatus accordingto claim 16, wherein the control signal generation circuit comprises: afirst delay circuit configured to delay and invert either the high-leveloutput signal or the low-level output signal of the Schmitt triggercircuit and configured to output a delayed and inverted signal; and alogic gate configured to receive either the high-level output signal orthe low-level output signal of the Schmitt trigger circuit and thedelayed and inverted signal outputted from the first delay circuit andconfigured to output the switch control signal.
 20. The semiconductorapparatus according to claim 18, wherein the control signal generationcircuit further comprises: a second delay circuit configured to delayand invert either the high-level output signal or the low-level outputsignal of the first delay circuit and configured to output anotherdelayed and inverted signal as the current control signal.
 21. Thesemiconductor apparatus according to claim 8, wherein the storage andoutput circuit comprises: a first transistor including a first gateconfigured to receive a latch signal from a latch circuit, a firstsource configured to be coupled to a ground terminal and a first drain;a second transistor including a second gate configured to receive alatch inversion signal, a second source configured to be coupled to theground terminal and a second drain; a third transistor including a thirdgate configured to be coupled to the drain of the second transistor, athird source configured to receive the first voltage and a third drainconfigured to be coupled to the first drain of the first transistor; afourth transistor including a fourth gate configured to be coupled tothe drain of the first transistor, a fourth source configured to receivethe first voltage and a fourth drain configured to be coupled to thesecond drain of the first transistor; a fifth transistor including afifth gate configured to receive the voltage detection signal, a fifthsource configured to receive the first voltage and a fifth drainconfigured to be coupled to a node to which the second and fourthtransistors are coupled in common; an inverter configured to have aninput terminal coupled to a node to which the second, fourth, and fifthtransistors are coupled in common and an output terminal to output thepower control signal; and a capacitor configured to have a firstterminal coupled to the output terminal of the inverter and a secondterminal coupled to the ground terminal.
 22. The semiconductor apparatusaccording to claim 1, wherein the level shifter is configured to lower avoltage level of an internal node coupling to a thin oxide transistor.23. The semiconductor apparatus according to claim 1, wherein the levelshifter comprises: a current mirror configured to receive an inputsignal in response to the first voltage and generate an output signal bymirroring a current corresponding to the second voltage based on a levelof the input signal; an adjusting circuit coupled to a power voltageterminal which receives the second voltage in parallel to the currentmirror and configured to adjust the voltage level of the output terminalof the current mirror.
 24. The semiconductor apparatus according toclaim 1, wherein the level shifter comprises: an adjusting circuitcoupled to an output terminal of a current mirror and configured toadjust a voltage level of the output terminal of the current mirror inresponse to a bias voltage.
 24. The semiconductor apparatus according toclaim 1, wherein the level shifter comprises: an adjusting circuitcoupled to a first current path and a second current path of a currentmirror and configured to adjust voltage levels of the first current pathand the second current path and to reduce a leakage current of thesecond current path.
 25. The semiconductor apparatus according to claim23, wherein the current mirror includes: a first switching element ofwhich one terminal is coupled to the power voltage terminal; a secondswitching element of which one terminal is coupled to the power voltageterminal and the other terminal is coupled to the output terminal; athird switching terminal of which one terminal is coupled to the powervoltage terminal, the other terminal is commonly coupled to a controlterminal of the first switching element and a control terminal of thesecond switching element, and a control terminal is coupled to theoutput terminal of the current mirror; a fourth switching element ofwhich the input signal is input to a control terminal; and a fifthswitching element of which an inverted input signal is input to acontrol terminal.
 26. The semiconductor apparatus according to claim 24,wherein the level shifter includes: a first stabilization switchingelement configured to activate the current mirror by transfer a voltageof a node to a node of switching element coupled to the first currentpath in response to the power control signal; and a second stabilizationswitching element configured to activate the current mirror by transfera voltage of a node to a node of switching element coupled to the secondcurrent path in response to the power control signal.
 27. Thesemiconductor apparatus according to claim 18, wherein the adjustingcircuit is configured to maintain a voltage level of an output voltageof the output terminal of the current mirror to be equal to or greaterthan a value, the value equal to a sum of the bias voltage and athreshold voltage of the adjusting circuit.
 28. The semiconductorapparatus according to claim 1, wherein the level shifter includes atransistor having a gate insulating layer whose thickness is from 16 nmto 32 nm.